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SQ3427EEV
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TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
0.005
0.004
0.003
T J = 25 °C
10 -0
10 -1
10 -2
10 -3
10 -4
10 -5
T J = 150 °C
0.002
0.001
0
10 -6
10 -7
10 - 8
10 -9
10 -10
T J = 25 °C
0
5
10
15
20
25
0
5 10 15 20
25
20
V GS - Gate-to-Source V oltage ( V )
Gate Current vs. Gate-Source Voltage
20
V GS - Gate-to-Source V oltage ( V )
Gate Current vs. Gate-Source Voltage
16
12
8
V GS = 10 V thru 5 V
V GS = 4 V
16
12
8
4
0
V GS = 3 V
4
0
T C = 25 °C
T C = 125 °C
T C = - 55 °C
0
2 4 6 8
10
0
2
4 6 8
10
15
V D S - Drain-to- S ource Voltage (V)
Output Characteristics
0.25
V GS - G ate-to- S ource Voltage (V)
Transfer Characteristics
12
9
T C = 25 °C
T C = - 55 °C
0.20
0.15
V GS = 4.5 V
6
3
0
T C = 125 ° C
0.10
0.05
0
V GS = 10 V
0
2
4 6
8
10
0
4
8 12
16
20
I D - Drain Current (A)
Transconductance
I D - Drain Current (A)
On-Resistance vs. Drain Current
S11-2124-Rev. B, 07-Nov-11
3
Document Number: 66826
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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